Qing Cao

 Qing Cao

Contact Information

1304 W. Green Street
M/C 246
Urbana, IL 61801
Affiliate Faculty
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Additional Campus Affiliations


Professor Cao received his B.S. degree in 2004 from Nanjing University, and his Ph.D. in 2009 from the University of Illinois at Urbana-Champaign. After working at IBM Thomas J. Watson Research Center as research scientist for 9 years, he returned to the University of Illinois as an Associate Professor of Materials Science and Engineering, and Affiliate of the Department of Chemistry and of the Department of Electrical Engineering. 

Research Interests

  • Advanced materials for electronics and optoelectronics

Research Description

The Cao group seeks to exploit new materials and processing techniques to develop novel electronic and optoelectronic devices exhibiting enhanced performance and functionality with more custom form factors.  This includes high performance extremely-scaled devices for future technology nodes, and low-cost printed electronics for macroelectronics and energy harvesting.  These efforts are highly multidisciplinary, requiring a combined expertise in materials science, chemistry, electrical engineering, and device physics.

Distinctions / Awards

  • Fellow of the World Innovation Organization Sponsored by the United Nations Development Programme (UNDP) (2017)
  • Millennium Fellow of the Atlantic Council (2017)
  • I.B.M. Pat Goldberg Memorial Best Paper Award (2017)
  • I.B.M. Master Inventor Recognition (2016)
  • 35 Innovators under 35 (TR35) by MIT Technology Review (2016)
  • U.S. Frontiers of Engineering by National Academy of Engineering (2016)
  • I.B.M. Research Division Award (2016)
  • “All-Star Alumni” of Forbes 30 Under 30 (2016)
  • I.B.M. Corporation Outstanding Technical Achievement Award (2015)
  • Forbes Magazine "30 under 30" list of rising stars in Science (2012)
  • I.B.M. Corporation Invention Achievement Award (17 times) (2009-17)

Selected Publications

Journal Articles

Cao, Q, J. Tersoff, D. B. Farmer, Y. Zhu, and S. J. Han Carbon nanotube transistors scaled to a 40-nanometer footprint Science 356 6345 2017, p. 1369-1372.
Cao, Q, S. J. Han, J. Tersoff, A. D. Franklin, Y. Zhu, G. S. Zhang, G. S. Tulevski, J. S. Tang, and W. Haensch End-bonded contacts for carbon nanotube transistors with low, size-independent resistance Science 350 6256 2015, p. 68-72.
Cao, Q, S. J. Han, G. S. Tulevski, Y. Zhu, D. D. Lu, and W. Haensch Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics Nature Nanotechnology 8 2013, p. 180-186.
Cao, Q, H. S. Kim, N. Pimparkar, J. P. Kulkarmi, C. Wang, M. Shim, K. Roy, M. A. Alam, and J. A. Rogers Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates Nature 454 2008, p. 495-500.